inchange semiconductor isc product specification isc silicon npn power transistor 2SC2750 description collector-emitter sustaining voltage- : v ceo(sus) = 100v(min) high current capability high power dissipation applications designed for high speed, high current switching industrial applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b b base current-continuous 5 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2750 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 10a; i b1 = 1a; l= 100 h 100 v v cex(sus)1 collector-emitter sustaining voltage i c = 10a; i b1 = -i b = 1a; t a = 125 l= 180 h; clamped 150 v v cex(sus)2 collector-emitter sustaining voltage i c = 20a; i b1 = 2a; i b2 = 1a; t a = 125 ; l= 180 h; clamped 100 v v ce( sat ) collector-emitter saturation voltage i c = 10a; i b = 1a 0.6 v v be( sat ) base-emitter saturation voltage i c = 10a; i b = 1a 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i cer collector cutoff current v ce = 100v; r be = 50 ; t a = 125 1.0 ma i cex collector cutoff current v ce = 100v;v be(off) = -1.5v; v ce = 100v;v be(off) = -1.5v;t a =125 10 500 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 5a; v ce = 5v 30 120 h fe-2 dc current gain i c = 10a; v ce = 5v 20 switching times t on turn-on time 1.0 s t stg storage time 1.5 s t f fall time i c = 10a, i b1 = -i b2 = 1a, v cc 50v; r l = 5 0.3 s ? h fe-1 classifications m l k 30-60 40-80 60-120 isc website www.iscsemi.cn 2
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